To extract the room-temperature drift mobility and sheet carrier density of two-dimensional hole gas (2DHG) that form in Ge strained channels of various thicknesses in p-type modulation-doped heterostructures, the magnetic field dependences of the magnetoresistance and Hall resistance at temperature of 295 K were measured and the technique of maximum entropy mobility spectrum analysis was applied. This technique allows a unique determination of mobility and sheet carrier density of each group of carriers present in parallel conducting multilayers semiconductor heterostructures. Extremely high room-temperature drift mobility (at sheet carrier density) of 2DHG was obtained in a sample with a 20 nm thick Ge strained channel.
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