In most electronic devices, the electric current of both types (electrons and holes) flows through a junction. Usually the boundary conditions have been formulated exclusively for open circuit. The boundary conditions proposed here bypass this limitation. Besides, these boundary conditions correctly describe the current flow in a circuit, i.e., closed circuit conditions, which are the usual operation conditions for electronic devices and for the measurement of many transport properties. We also have generalized the case (as much as it is possible in a classical treatment), so self-consistent boundary conditions that describe the current flow through a contact between two arbitrary conducting media are developed in the present work. These boundary conditions take into account a recently developed theory: influence of temperature space inhomogeneity due to the interfaces and quasiparticles temperature mismatch on thermogeneration and recombination. They also take into account surface resistance, surface recombination rates, and possible temperature discontinuities at the interface due to finite surface thermoconductivity. The temperature difference between current carriers and phonon subsystems is also included in this approach.

1.
Y. G.
Gurevich
,
G. N.
Logvinov
,
O. I.
Lyubimov
, and
O. Yu.
Titov
,
Phys. Rev. B
51
,
6999
(
1995
).
2.
Y. G.
Gurevich
,
J. Thermoelectricity
2
,
5
(
1997
).
3.
I. N.
Volovichev
and
Yu. G.
Gurevich
,
Semiconductors
35
,
306
(
2001
).
4.
Y. G.
Gurevich
,
G. N.
Logvinov
,
G.
Espejo
,
O. Y.
Titov
, and
A.
Meriuts
,
Semiconductors
34
,
755
(
2000
).
5.
Y. G.
Gurevich
and
I. N.
Volovichev
,
Phys. Rev. B
60
,
7715
(
1999
).
6.
J. Singh, Semiconductor Devices: Basic Principles (Wiley, New York, 2001).
7.
S. M. Sze, Semiconductor Devices: Physics and Technology (Wiley, New York, 1985).
8.
R.
Aguado
and
L.
Kouwenhoven
,
Phys. Rev. Lett.
84
,
1986
(
2000
);
C. W.
Hoyt
,
M.
Sheik-Bahae
,
R. I.
Epstein
,
B. C.
Edwards
, and
J. E.
Anderson
,
Phys. Rev. Lett.
85
,
3600
(
2000
).
9.
F. J.
DiSalvo
,
Science
285
,
703
(
1999
);
G. D.
Mahan
and
L. M.
Wood
,
Phys. Rev. Lett.
80
,
4016
(
1998
).
10.
A.
Fujiwara
and
Y.
Takahashi
,
Nature (London)
40
,
560
(
2001
).
11.
Jan Tautc, Photo and Thermoelectric Effects in Semiconductors (Pergamon, New York, 1962).
12.
A. I. Anselm, Introduction to Semiconductor Theory (Prentice-Hall, Englewood Cliffs, NJ, 1981).
13.
A. F. Ioffe, Physics of Semiconductors (Infosearch, London, 1960).
14.
I. I. Balmush, Z. M. Dashevsky, and A. I. Kasiyan, Thermoelectric Phenomena in Multilayer Semiconductor Structures (Shtiintsa, Kishenev, 1992) (in Russian).
15.
L. D. Landau and E. M. Lifshits, Course of Theoretical Physics, Vol. 8: Electrodynamics of Continuous Media (Pergamon, New York, 1984).
16.
V. L. Bonch-Bruevich, and S. G. Kalashnikov, Physics of Semiconductors (VEB Deutscher Verlag der Wissen-Schaften, Berlin, 1982) (in German).
17.
Y. G.
Gurevich
and
O. L.
Mashkevich
,
Phys. Rep.
181
,
327
(
1989
).
18.
D. A. Neamen, Semiconductor Physics and Devices: Basic Principles (Richard D. Irwin, Boston, 1992).
19.
V. P. Silin and A. A. Rukhadze, Electromagnetic Properties of the Plasma and Related Media (Atomizdat, Moscow, 1961) (in Russian).
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