We use pseudopotential theory to provide (1) the band offsets of strained GaAs and InAs on various substrates and (2) the energies Ev(x) and Ec(x) of the valence and conduction bands of InxGa1−xAs alloy, as a function of composition. Results are presented for both the bulk alloy and for the alloy strained on InP or GaAs. We predict that while Ec(x) bows downward for relaxed bulk alloys, it bows upward for strained epitaxial alloys. The calculated alloy offsets are used to discuss electron and hole localization in this system.

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