-Si was grown on by rapid thermal chemical vapor deposition. The tunneling oxide layer of a thickness of 4 nm was formed on p-type Si(100) by rapid thermal oxidation at 1050 °C for 30 s. Metal–oxide–semiconductor (MOS) structures were fabricated and capacitance–voltage characterization was carried out to study the memory effects of the embedded in the MOS structure. We found the memory effect to be dominantly related to hydrogen-related traps, in addition to being influenced by the three-dimensional quantum confinement and Coulomb charge effects. Deep level transient spectroscopy reveal that the activation energies of the hydrogen-related traps are (H1) and (H2), and the capture cross sections are and respectively. The presence of and bonds was confirmed by Fourier transform infrared spectroscopy.
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8 April 2002
Research Article|
April 08 2002
Memory effects related to deep levels in metal–oxide–semiconductor structure with nanocrystalline Si
Young Hae Kwon;
Young Hae Kwon
QSRC and Department of Physics, Dongguk University, Seoul 100-715, Korea
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C. J. Park;
C. J. Park
QSRC and Department of Physics, Dongguk University, Seoul 100-715, Korea
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W. C. Lee;
W. C. Lee
QSRC and Department of Physics, Dongguk University, Seoul 100-715, Korea
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D. J. Fu;
D. J. Fu
QSRC and Department of Physics, Dongguk University, Seoul 100-715, Korea
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Y. Shon;
Y. Shon
QSRC and Department of Physics, Dongguk University, Seoul 100-715, Korea
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T. W. Kang;
T. W. Kang
QSRC and Department of Physics, Dongguk University, Seoul 100-715, Korea
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C. Y. Hong;
C. Y. Hong
QSRC and Department of Physics, Dongguk University, Seoul 100-715, Korea
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H. Y. Cho;
H. Y. Cho
QSRC and Department of Physics, Dongguk University, Seoul 100-715, Korea
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Kang L. Wang
Kang L. Wang
Electrical Engineering Department, University of California at Los Angeles, Los Angeles, California 90095-1594
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Appl. Phys. Lett. 80, 2502–2504 (2002)
Article history
Received:
October 19 2001
Accepted:
February 11 2002
Citation
Young Hae Kwon, C. J. Park, W. C. Lee, D. J. Fu, Y. Shon, T. W. Kang, C. Y. Hong, H. Y. Cho, Kang L. Wang; Memory effects related to deep levels in metal–oxide–semiconductor structure with nanocrystalline Si. Appl. Phys. Lett. 8 April 2002; 80 (14): 2502–2504. https://doi.org/10.1063/1.1467617
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