We demonstrate that external cavity diode lasers with large mode-hop-free tuning ranges (up to 80 GHz) together with wavelength modulation spectroscopy can be used to study excitonic transitions in semiconductor nanostructures. Such transitions are characterized by homogeneous linewidths typically on the order of a few GHz. Wavelength modulation spectroscopy offers a high signal-to-noise method for the determination of resonance line shapes. We have used this technique to accurately measure dipole moments and dephasing rates of single semiconductor quantum dot eigenstates. These measurements are important for the use of quantum dots in semiconductor cavities and quantum logic gates, and for an improved understanding of the physics of exciton confinement.

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