We demonstrate that external cavity diode lasers with large mode-hop-free tuning ranges (up to 80 GHz) together with wavelength modulation spectroscopy can be used to study excitonic transitions in semiconductor nanostructures. Such transitions are characterized by homogeneous linewidths typically on the order of a few GHz. Wavelength modulation spectroscopy offers a high signal-to-noise method for the determination of resonance line shapes. We have used this technique to accurately measure dipole moments and dephasing rates of single semiconductor quantum dot eigenstates. These measurements are important for the use of quantum dots in semiconductor cavities and quantum logic gates, and for an improved understanding of the physics of exciton confinement.
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18 March 2002
Research Article|
March 18 2002
Wavelength modulation spectroscopy of single quantum dots
T. H. Stievater;
T. H. Stievater
Harrison M. Randall Laboratory of Physics, University of Michigan, Ann Arbor, Michigan 48109
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Xiaoqin Li;
Xiaoqin Li
Harrison M. Randall Laboratory of Physics, University of Michigan, Ann Arbor, Michigan 48109
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J. R. Guest;
J. R. Guest
Harrison M. Randall Laboratory of Physics, University of Michigan, Ann Arbor, Michigan 48109
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D. G. Steel;
D. G. Steel
Harrison M. Randall Laboratory of Physics, University of Michigan, Ann Arbor, Michigan 48109
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D. Gammon;
D. Gammon
Naval Research Laboratory, Washington, DC 20375
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D. S. Katzer;
D. S. Katzer
Naval Research Laboratory, Washington, DC 20375
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D. Park
D. Park
Naval Research Laboratory, Washington, DC 20375
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Appl. Phys. Lett. 80, 1876–1878 (2002)
Article history
Received:
October 19 2001
Accepted:
January 16 2002
Citation
T. H. Stievater, Xiaoqin Li, J. R. Guest, D. G. Steel, D. Gammon, D. S. Katzer, D. Park; Wavelength modulation spectroscopy of single quantum dots. Appl. Phys. Lett. 18 March 2002; 80 (11): 1876–1878. https://doi.org/10.1063/1.1461071
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