We present a theory of deformation potential carrier scattering of two-dimensional electron gases from the strain fields surrounding edge dislocations. The scattering rate is evaluated in closed form without any fitting parameters. The result is directed towards understanding mobility limiting scattering mechanisms for two-dimensional electron gases at AlGaN/GaN heterointerfaces.
REFERENCES
1.
2.
3.
4.
5.
6.
7.
This assumption does not hold for III–V nitrides, which have strong polarization fields in quantum wells. However, the assumption introduces negligible error, since we assume a perfect 2DEG.
8.
9.
10.
J. M. Ziman, Electrons and Phonons (Oxford University Press, Oxford, 2001), p. 230.
11.
J. H. Davies, The Physics of Low Dimensional Semiconductors (Cambridge University Press, Cambridge, 1998), p. 357.
12.
13.
M. Manfra (private communication)
14.
I. P.
Smorchkova
, C. R.
Elsass
, J. P.
Ibbetson
, R.
Vetury
, B.
Heying
, P.
Fini
, E.
Haus
, S. P.
DenBaars
, J. S.
Speck
, and U. K.
Mishra
, J. Appl. Phys.
86
, 4520
(1999
).15.
16.
Y.
Zhang
, I. P.
Smorchkova
, C. R.
Elsass
, S.
Keller
, J. P.
Ibbetson
, S.
DenBaars
, U. K.
Mishra
, and J.
Singh
, J. Appl. Phys.
87
, 7981
(2000
).
This content is only available via PDF.
© 2002 American Institute of Physics.
2002
American Institute of Physics
You do not currently have access to this content.