We report on the fabrication of single-crystalline thin films of (R: rare-earth element, R123) using an approach of vapor–liquid–solid tri-phase epitaxy. This method is based on application of pulsed-laser deposition under appropriate compositions and conditions predetermined from the relevant thermodynamic phase diagram. The laser-ablated gases of R, Ba, and Cu, and their oxides dissolve into a liquid layer placed on the film/substrate surface, penetrate to reach the liquid–solid interface with a seed R123, and are condensed into the solid R123 phase under a quasiequilibrium state. The uniform single-crystalline nature of the film was verified by x-ray diffraction, atomic-force microscopy, and transmission electron microscopy by the observation of giant grain size and atomic-scale surface smoothness.
Skip Nav Destination
,
,
,
,
,
,
,
,
,
Article navigation
7 January 2002
Research Article|
January 07 2002
Vapor–liquid–solid tri-phase pulsed-laser epitaxy of single-crystal films
K. S. Yun;
K. S. Yun
Ceramics Materials and Structures Laboratory, Tokyo Institute of Technology, 4259, Yokohama 226-8503, Japan
Search for other works by this author on:
B. D. Choi;
B. D. Choi
Ceramics Materials and Structures Laboratory, Tokyo Institute of Technology, 4259, Yokohama 226-8503, Japan
Search for other works by this author on:
Y. Matsumoto;
Y. Matsumoto
Ceramics Materials and Structures Laboratory, Tokyo Institute of Technology, 4259, Yokohama 226-8503, Japan
Search for other works by this author on:
J. H. Song;
J. H. Song
Ceramics Materials and Structures Laboratory, Tokyo Institute of Technology, 4259, Yokohama 226-8503, Japan
Search for other works by this author on:
N. Kanda;
N. Kanda
Ceramics Materials and Structures Laboratory, Tokyo Institute of Technology, 4259, Yokohama 226-8503, Japan
Search for other works by this author on:
T. Itoh;
T. Itoh
Ceramics Materials and Structures Laboratory, Tokyo Institute of Technology, 4259, Yokohama 226-8503, Japan
Search for other works by this author on:
M. Kawasaki;
M. Kawasaki
Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba, Sendai, 980-8577, Japan
Search for other works by this author on:
T. Chikyow;
T. Chikyow
COMET–NIRIM, National Institute for Research in Inorganic Materials, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
Search for other works by this author on:
P. Ahmet;
P. Ahmet
COMET–NIRIM, National Institute for Research in Inorganic Materials, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
Search for other works by this author on:
H. Koinuma
H. Koinuma
Frontier Collaborative Research Center Laboratory, Tokyo Institute of Technology, 4259, Yokohama 226-8503, Japan
Search for other works by this author on:
K. S. Yun
B. D. Choi
Y. Matsumoto
J. H. Song
N. Kanda
T. Itoh
M. Kawasaki
T. Chikyow
P. Ahmet
H. Koinuma
Ceramics Materials and Structures Laboratory, Tokyo Institute of Technology, 4259, Yokohama 226-8503, Japan
Appl. Phys. Lett. 80, 61–63 (2002)
Article history
Received:
February 12 2001
Accepted:
October 29 2001
Citation
K. S. Yun, B. D. Choi, Y. Matsumoto, J. H. Song, N. Kanda, T. Itoh, M. Kawasaki, T. Chikyow, P. Ahmet, H. Koinuma; Vapor–liquid–solid tri-phase pulsed-laser epitaxy of single-crystal films. Appl. Phys. Lett. 7 January 2002; 80 (1): 61–63. https://doi.org/10.1063/1.1432111
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Diamagnetic levitation of water realized with a simple device consisting of ordinary permanent magnets
Tomoya Naito, Tomoaki Suzuki, et al.
Charge localization in optoelectronic and photocatalytic applications: Computational perspective
Francesco Ambrosio, Julia Wiktor
Related Content
A phase relation study of Ba–Y–Cu–O coated-conductor films using the combinatorial approach
Appl. Phys. Lett. (April 2009)
Interband optical absorption in free standing layer of Ga 0.96 In 0.04 As 0.99 N 0.01
Appl. Phys. Lett. (March 2000)
Time-resolved reflectivity characterization of polycrystalline low-temperature-grown GaAs
Appl. Phys. Lett. (April 1999)
Temperature dependence of photoluminescence on molecular-beam-epitaxy grown Ga 2 O 3 (Gd 2 O 3 )/GaAs
Appl. Phys. Lett. (October 1999)
Manufacture of specific structure of aluminum-doped zinc oxide films by patterning the substrate surface
Appl. Phys. Lett. (April 2002)