The longitudinal carrier density distribution of an InGaAlAs high-power broad-area semiconductor laser has been measured using spontaneous emission from the side of the device. The laser shows continuously increasing carrier densities on the facet with the high reflectivity coating (reverse facet). This has a major impact on the efficiency and the lifetime of the laser. This behavior is in good agreement with one-dimensional calculations for the longitudinal carrier distribution.

1.
M.
Behringer
,
G.
Herrmann
,
S.
Grötsch
,
W.
Teich
,
J.
Luft
,
B.
Acklin
,
L.
Korte
,
C.
Hanke
, and
M.
Marchiano
,
SPIE Photon. West
4287
,
83
(
2001
).
Google Scholar
 
2.
A. J.
Bennett
,
R. D.
Clayton
, and
J. M.
Xu
,
J. Appl. Phys.
83
,
3784
(
1998
).
Google Scholar
Crossref
Search ADS
 
3.
F.
Girardin
and
G. H.
Guang
,
IEEE J. Sel. Top. Quantum Electron.
3
,
461
(
1997
).
Google Scholar
Crossref
Search ADS
 
4.
L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits (Wiley, New York, 1995).
5.
G. P. Agrawal and N. K. Dutta, Semiconductor Lasers (Van Nostrand-Reinhold, New York, 1993).
This content is only available via PDF.
© 2002 American Institute of Physics.
2002
American Institute of Physics
You do not currently have access to this content.