$GaN$ metal–semiconductor–metal photodetectors grown on lithium gallate substrates by molecular-beam epitaxy Available to Purchase

The growth, fabrication, and characterization of ultraviolet metal–semiconductor–metal (MSM) GaN photodetectors grown on $LiGaO2$ by molecular-beam epitaxy are reported herein. $GaN/LiGaO2$ material with dislocation densities of approximately $108 cm−2$ and x-ray diffraction (00.4) full width at half maximum of 75 arcsec results in MSMs showing high responsivity, 0.105 A/W, at a reverse bias voltage of 20 V at 308 nm, and low dark currents of 7.88 pA at a 60 V reverse bias. Given the etch selectivity of the $GaN/LiGaO2$ system and the excellent performance of these devices, GaN device integration onto alternative substrates appears promising.