When a thin oxide is subjected to heavy ion irradiation, a large leakage current similar to the soft breakdown can be produced. In this work, we have studied the radiation soft breakdown (RSB) after 257 MeV Ag and I irradiation by using a quantum point contact (QPC) model, which also applies to hard and soft breakdown produced by electrical stresses. We have also studied the temperature dependence of RSB current from 98 K up to room temperature, and found that the gate current after irradiation is strongly reduced by decreasing temperature. It is shown that this behavior can be attributed to a temperature dependence of the carriers supplied from the cathode rather than to a temperature-induced modification of the size and/or shape of the oxide RSB paths.
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27 August 2001
Research Article|
August 27 2001
Post-radiation-induced soft breakdown conduction properties as a function of temperature
Andrea Cester;
Andrea Cester
Dipartimento di Elettronica e Informatica, Universitá di Padova, Via Gradenigo 6A, 35131 Padova, Italy, and INFM, Unità di Padova-E4
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Alessandro Paccagnella;
Alessandro Paccagnella
Dipartimento di Elettronica e Informatica, Universitá di Padova, Via Gradenigo 6A, 35131 Padova, Italy, and INFM, Unità di Padova-E4
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Jordi Suñé;
Jordi Suñé
Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain
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Enrique Miranda
Enrique Miranda
Departamento de Fı́sica-Facultad de Ingenierı́a, Universidad de Buenos Aires, 1063-Buenos Aires Argentina
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Appl. Phys. Lett. 79, 1336–1338 (2001)
Article history
Received:
May 11 2001
Accepted:
July 09 2001
Citation
Andrea Cester, Alessandro Paccagnella, Jordi Suñé, Enrique Miranda; Post-radiation-induced soft breakdown conduction properties as a function of temperature. Appl. Phys. Lett. 27 August 2001; 79 (9): 1336–1338. https://doi.org/10.1063/1.1398329
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