We present the results of experiments that assess the viability of anti-Stokes scattering to investigate in situ materials at high temperatures. Both anti-Stokes and Stokes Raman measurements have been performed at various high temperatures using hafnia as a test material. As compared with Stokes Raman spectra, anti-Stokes spectra were observed with lower thermal emission backgrounds in accordance with Planck’s equation. The intensity ratio of anti-Stokes to Stokes scattering approaches 1 as the temperature increases at high temperatures satisfying the Boltzmann distribution law. These results clearly demonstrate the advantage and feasibility of anti-Stokes Raman scattering for the elimination of the thermal emission in comparison with Stokes scattering.
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13 August 2001
Research Article|
August 13 2001
Advantage of anti-Stokes Raman scattering for high-temperature measurements
Hirotaka Fujimori;
Hirotaka Fujimori
Department of Advanced Materials Science and Engineering, Faculty of Engineering, Yamaguchi University, Ube, 755-8611, Japan
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Masato Kakihana;
Masato Kakihana
Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama, 226-8503, Japan
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Koji Ioku;
Koji Ioku
Department of Advanced Materials Science and Engineering, Faculty of Engineering, Yamaguchi University, Ube, 755-8611, Japan
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Seishi Goto;
Seishi Goto
Department of Advanced Materials Science and Engineering, Faculty of Engineering, Yamaguchi University, Ube, 755-8611, Japan
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Masahiro Yoshimura
Masahiro Yoshimura
Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama, 226-8503, Japan
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Appl. Phys. Lett. 79, 937–939 (2001)
Article history
Received:
May 17 2001
Accepted:
June 15 2001
Citation
Hirotaka Fujimori, Masato Kakihana, Koji Ioku, Seishi Goto, Masahiro Yoshimura; Advantage of anti-Stokes Raman scattering for high-temperature measurements. Appl. Phys. Lett. 13 August 2001; 79 (7): 937–939. https://doi.org/10.1063/1.1394174
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