We report a class of highly efficient electroluminescent materials based on fluorinated iridium compounds. Using aluminum as the cathode, a device, using fac-tris[5-fluoro-2(5-trifluoromethyl-2-pyridinyl)phenyl-C,N]iridium (Ir-2h) as the luminescent layer, displayed intense electroluminescence at 525 nm with an efficiency of 20 cd/A and a maximum radiance of 4800 cd/m2. Differing from the previously reported Ir-2h can be used in the undiluted form without the use of a charge-transporting host. This indicates that Ir-2h by itself has good enough charge-transporting properties. Photoluminescence studies at room temperature and 77 K revealed that electroluminescence originates from the metal-to-ligand charge transfer state with a quantum yield of 0.56 for Ir-2h and 0.5 for in toluene at room temperature. In the thin-film form, photoluminescence quantum yield of Ir-2h is a factor of 10 greater than that of due to the larger self-quenching effect of
Skip Nav Destination
Article navigation
23 July 2001
Research Article|
July 23 2001
Highly efficient electroluminescent materials based on fluorinated organometallic iridium compounds Available to Purchase
Y. Wang;
Y. Wang
Central Research and Development, E. I. DuPont de Nemours and Company, Inc., Experimental Station, Wilmington, Delaware 19880-0356
Search for other works by this author on:
N. Herron;
N. Herron
Central Research and Development, E. I. DuPont de Nemours and Company, Inc., Experimental Station, Wilmington, Delaware 19880-0356
Search for other works by this author on:
V. V. Grushin;
V. V. Grushin
Central Research and Development, E. I. DuPont de Nemours and Company, Inc., Experimental Station, Wilmington, Delaware 19880-0356
Search for other works by this author on:
D. LeCloux;
D. LeCloux
Central Research and Development, E. I. DuPont de Nemours and Company, Inc., Experimental Station, Wilmington, Delaware 19880-0356
Search for other works by this author on:
V. Petrov
V. Petrov
Central Research and Development, E. I. DuPont de Nemours and Company, Inc., Experimental Station, Wilmington, Delaware 19880-0356
Search for other works by this author on:
Y. Wang
Central Research and Development, E. I. DuPont de Nemours and Company, Inc., Experimental Station, Wilmington, Delaware 19880-0356
N. Herron
Central Research and Development, E. I. DuPont de Nemours and Company, Inc., Experimental Station, Wilmington, Delaware 19880-0356
V. V. Grushin
Central Research and Development, E. I. DuPont de Nemours and Company, Inc., Experimental Station, Wilmington, Delaware 19880-0356
D. LeCloux
Central Research and Development, E. I. DuPont de Nemours and Company, Inc., Experimental Station, Wilmington, Delaware 19880-0356
V. Petrov
Central Research and Development, E. I. DuPont de Nemours and Company, Inc., Experimental Station, Wilmington, Delaware 19880-0356
Appl. Phys. Lett. 79, 449–451 (2001)
Article history
Received:
February 21 2001
Accepted:
May 18 2001
Citation
Y. Wang, N. Herron, V. V. Grushin, D. LeCloux, V. Petrov; Highly efficient electroluminescent materials based on fluorinated organometallic iridium compounds. Appl. Phys. Lett. 23 July 2001; 79 (4): 449–451. https://doi.org/10.1063/1.1384903
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Hard x-ray photoemission study of bulk single-crystalline InGaZnO4
Goro Shibata, Yunosuke Takahashi, et al.
Shining light in a heartbeat: Controlling cardiac bioelectricity with membrane-targeted photoswitches
Chiara Florindi, Giulia Simoncini, et al.
Related Content
Enhanced electrophosphorescence via highly efficient energy transfer from conjugated polymer
Appl. Phys. Lett. (April 2005)
Matrix effects on the structural and optical properties of InAs quantum dots
Appl. Phys. Lett. (November 2001)
Photoluminescence and electroluminescence of a new blue-emitting homoleptic iridium complex
Appl. Phys. Lett. (March 2006)
Enhancement of iridium-based organic light-emitting diodes by spatial doping of the hole transport layer
Appl. Phys. Lett. (October 2005)
Dramatic effects of hole transport layer on the efficiency of iridium-based organic light-emitting diodes
Appl. Phys. Lett. (November 2004)