Three hydrogen-terminated diamonds with different surface roughness and morphologies have been investigated by conductivity and Hall experiments in the temperature regime 0.34–350 K. The sheet hole densities are weakly temperature dependent above a critical temperature Tc(20 K⩽Tc⩽70 K), below Tc carriers freeze out. The mobilities of holes show a minimum at Tc increasing towards higher and even stronger towards lower temperatures significantly up to 400 cm2/V s. A transport model is introduced where holes propagate in the valence band where a disorder-induced tail of localized states is present.

1.
M. I.
Landstrass
and
K. V.
Ravi
,
Appl. Phys. Lett.
55
,
975
(
1989
).
2.
T.
Maki
,
S.
Shikama
,
M.
Komori
,
Y.
Sakaguchi
,
K.
Sakuta
, and
T.
Kobayashi
,
Jpn. J. Appl. Phys., Part 1
31
,
1446
(
1992
).
3.
K.
Hayashi
,
S.
Yamanaka
,
H.
Okushi
, and
K.
Kajimura
,
Appl. Phys. Lett.
68
,
376
(
1996
).
4.
H. J.
Looi
,
R. B.
Jackman
, and
J. S.
Foord
,
Appl. Phys. Lett.
72
,
353
(
1998
).
5.
R. I. S.
Gi
,
K.
Tashiro
,
S.
Tanaka
,
T.
Fujisawa
,
H.
Kimura
,
T.
Kurosu
, and
M.
Iida
,
Jpn. J. Appl. Phys., Part 1
38
,
3492
(
1999
).
6.
H.
Kawarada
,
Surf. Sci. Rep.
26
,
207
(
1996
).
7.
R. I. S.
Gi
,
T.
Mizumasa
,
Y.
Akiba
,
H.
Hirose
,
T.
Kurosu
, and
M.
Iida
,
Jpn. J. Appl. Phys., Part 1
34
,
5550
(
1995
).
8.
J.
Shirafuji
and
T.
Sugino
,
Diamond Relat. Mater.
5
,
706
(
1996
).
9.
F.
Maier
,
M.
Riedel
,
B.
Mantel
,
J.
Ristein
, and
L.
Ley
,
Phys. Rev. Lett.
85
,
3472
(
2000
).
10.
H.
Kiyota
,
E.
Matsushima
,
K.
Sato
,
H.
Okushi
,
T.
Ando
,
M.
Kamo
,
Y.
Sato
, and
M.
Iida
,
Appl. Phys. Lett.
67
,
3596
(
1995
).
11.
S.
Albin
and
L.
Watkins
,
Appl. Phys. Lett.
56
,
1454
(
1990
).
12.
K.
Hayashi
,
S.
Yamanaka
,
H.
Watanabe
,
T.
Sekiguchi
,
H.
Okushi
, and
K.
Kajimura
,
Appl. Surf. Sci.
125
,
120
(
1998
).
13.
C.
Sauerer
,
F.
Ertl
,
C. E.
Nebel
,
M.
Stutzmann
,
P.
Bergonzo
,
O. A.
Williams
, and
R. A.
Jackman
,
Phys. Status Solidi A
2
,
241
(
2001
).
14.
H. H. Wieder, in Laboratory Notes on Electrical and Galvanomagnetic Measurements, Material Science Monographs, 2 (Elsevier, Amsterdam, 1979), Chap. 2, p. 39.
15.
C. E. Nebel, F. Ertl, C. Sauerer, M. Stutzmann, C. F. O. Graeff, P. Bergonzo, O. A. Williams, and R. B. Jackman, Diamond Relat. Mater.
16.
T. Tiedje, in Semiconductors and Semimetals, Vol. 21, Hydrogenated Amorphous Silicon, edited by J. I. Pankove, Part C (Academic, Orlando, 1984), p. 207.
17.
J. P. F. Sellschop, in The Properties of Natural and Synthetic Diamond, edited by J. E. Field (Academic, London, 1992), p. 81.
18.
M. Tachiki, T. Fukuda, H. Seo, K. Sugata, T. Banno, H. Umezawa, and H. Kawarada, Mater. Res. Soc. Symp. Proc. 675 (to be published).
This content is only available via PDF.
You do not currently have access to this content.