The present work uses Raman spectra to measure residual stresses in thin films. Based on thermodynamic analysis, a linear relationship is found between the stress and the square of the Raman frequency in the [transverse and E [longitudinal modes. We calibrate the linear relationship by measuring the Raman spectra of stressed bulk samples. Then, we assess residual stresses in the lead zirconate titanate thin films at different thicknesses and different annealing temperatures. The residual stresses extracted from the mode are consistent with those from the mode, which are more or less the same as those measured by the x-ray diffraction method.
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Research Article| December 17 2001
Determination of residual stresses in thin films with Raman spectroscopy
Wei-Hua Xu, Dexin Lu, Tong-Yi Zhang; Determination of residual stresses in thin films with Raman spectroscopy. Appl. Phys. Lett. 17 December 2001; 79 (25): 4112–4114. https://doi.org/10.1063/1.1426271
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