Annealing behavior of vacancies and the levels in n-type 4H–SiC epilayers after 2 MeV electron irradiation has been studied using positron annihilation and deep-level transient spectroscopy. Isochronal annealing studies indicate that silicon vacancy-related defects are primarily responsible for positron trapping. The levels are the predominant deep centers after irradiation and subsequent annealing at Both the positron-trapping rate at vacancies and the concentration decrease in a similar manner while annealing from 1200 to It is thus proposed that the levels originate from silicon vacancy-related defects.
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