We have investigated the influence of both the growth rate and the growth temperature on the structural and optical properties of single quantum wells grown by solid-source molecular beam epitaxy. The results are analyzed in light of the surface phase diagram obtained from in situ reflection high energy electron diffraction. We show that the best quality is achieved at the highest temperature below the onset of alloy decomposition. The use of high growth rates allows one to significantly increase the growth temperature. Our results demonstrate that it is the GaAsN alloy stability which governs the sample properties.
Influence of alloy stability on the photoluminescence properties of GaAsN/GaAs quantum wells grown by molecular beam epitaxy
M.-A. Pinault, E. Tournié; Influence of alloy stability on the photoluminescence properties of GaAsN/GaAs quantum wells grown by molecular beam epitaxy. Appl. Phys. Lett. 19 November 2001; 79 (21): 3404–3406. https://doi.org/10.1063/1.1418263
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