The structural properties of high-quality (0001)ZnO/Al2O3 films grown by plasma-enhanced molecular-beam epitaxy are investigated by x-ray diffraction and transmission electron microscopy. The only defects encountered are threading dislocations with a density of 1010–4×1010 cm−2. Most numerous dislocations are pure-edge dislocations (Burgers vector of 1/3〈112̄0〉), which accommodate slight in-plane misorientations between subgrains. The oxygen polarity of these films is also established.

Topics
Semiconductor device fabrication, Crystallographic defects, Crystal lattices, Epitaxy, Thin films, Transmission electron microscopy, X-ray diffraction
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