Epitaxial ferroelectric SrBi2Ta2O9 (SBT) thin films with a well-defined crystallographic orientation state consisting of a mix of (100) and (116) orientations have been grown on (110)-oriented SrLaGaO4 (SLG) substrates by pulsed laser deposition. X-ray pole figure analyses revealed the presence of two epitaxial orientation relationships, viz. SBT(100)‖SLG(110);SBT[001]‖SLG[001] and SBT(116)‖SLG(110);SBT[1̄10]‖SLG[001]. By calculating the integrated intensity of certain x-ray diffraction peaks, it was established that the crystallinity and the in-plane orientation of the (100) and (116) orientation are maximized at a substrate temperature of 775 and 788 °C, respectively, and that the volume fraction of the (100) orientation at about 770 °C reached about 60%.

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