Epitaxial ferroelectric (SBT) thin films with a well-defined crystallographic orientation state consisting of a mix of (100) and (116) orientations have been grown on (110)-oriented (SLG) substrates by pulsed laser deposition. X-ray pole figure analyses revealed the presence of two epitaxial orientation relationships, viz. and By calculating the integrated intensity of certain x-ray diffraction peaks, it was established that the crystallinity and the in-plane orientation of the (100) and (116) orientation are maximized at a substrate temperature of 775 and respectively, and that the volume fraction of the (100) orientation at about reached about 60%.
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