Monochromatic x-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, and Rutherford backscattering spectrometry are used to study the outdiffusion of Zr from the alternate gate dielectric candidate ZrSixOy thin films deposited on Si(100). We find that Zr incorporation into Si from ZrSixOy appears to occur at annealing temperatures higher than 1000 °C. Incorporation of Zr to depths of up to 23 nm into the silicon substrate is observed. A diffusion coefficient of D0∼2×10−15 cm2/s is estimated from the associated depth profiles.

1.
G. D.
Wilk
,
R. M.
Wallace
, and
J. M.
Anthony
,
J. Appl. Phys.
89
,
5243
(
2001
).
Google Scholar
 
2.
W.-J.
Qi
,
R.
Nieh
,
B. H.
Lee
,
L.
Kang
,
Y.
Jeon
,
K.
Onishi
,
T.
Ngai
,
S.
Banerjee
, and
J. C.
Lee
, Tech. Dig. - Int. Electron Devices Meet., 145 (1999).
3.
M. Quevedo-Lopez, M. El-Bouanani, S. Addepalli, J. L. Duggan, M. Visokay, M. Douglas, L. Colombo, B. E. Gnade, and R. M. Wallace, Appl. Phys. Lett. (submitted).
4.
B. W.
Busch
,
W. H.
Schulte
,
E.
Garfunkel
,
T.
Gustafsson
,
W.
Qi
,
R.
Nieh
, and
J.
Lee
,
Phys. Rev. B
62
,
R13290
(
2000
).
Google Scholar
 
5.
F.
Lacona
,
R.
Kelly
, and
G.
Marletta
,
J. Vac. Sci. Technol. A
17
,
2771
(
1999
).
Google Scholar
 
6.
G.
Willeke
and
K.
Kellermann
,
Semicond. Sci. Technol.
11
,
415
(
1996
).
Google Scholar
 
7.
For comparison, the etch rate of silicon oxide is reported to be >600 nm/min. See: W. R. Runyan and K. E. Bean, Semiconductor Integrated Circuit Processing Technology (Addison-Wesley, New York, 1994), p. 265.
8.
W.
Hoffmeisneter
and
M.
Zugel
,
Int. J. Appl. Radiat. Isot.
20
,
139
(
1969
).
Google Scholar
 
9.
M.
Balog
,
M.
Schieber
,
M.
Michman
, and
S.
Patai
,
Thin Solid Films
47
,
109
(
1977
).
Google Scholar
 
10.
M.
Copel
,
M.
Gribelyuk
, and
E.
Gusev
,
Appl. Phys. Lett.
76
,
436
(
2000
).
Google Scholar
 
11.
G. D.
Wilk
and
R. M.
Wallace
,
Appl. Phys. Lett.
76
,
112
(
2000
).
Google Scholar
 
12.
Assuming an inelastic mean free path λ≈3 nm, the Si 2p photoelectron can be anticipated to originate from depths ∼3 λ;
Z. H.
Lu
,
J. P.
McCaffery
,
B.
Brar
,
G. D.
Wilk
,
R. M.
Wallace
,
L. C.
Feldman
, and
S. P.
Tay
,
Appl. Phys. Lett.
71
,
2764
(
1997
).
Google Scholar
 
13.
J. F. Ziegler and J. P. Biersack, SRIM-The stopping and range of ions in matter. Version 2000.39 (2000);
http://www.research.ibm.com/ionbeams/
14.
T.
Yamauchi
,
H.
Kitamura
,
N.
Wakai
,
S.
Zaima
,
Y.
Koide
, and
Y.
Yasuda
,
J. Vac. Sci. Technol.
11
,
2619
(
1993
).
Google Scholar
 
15.
J. Q.
Wang
and
J. W.
Mayer
,
J. Appl. Phys.
64
,
4711
(
1988
).
Google Scholar
 
16.
S.
Zaima
,
N.
Wakai
,
T.
Yamauchi
, and
Y.
Yasuda
,
J. Appl. Phys.
74
,
6703
(
1993
).
Google Scholar
 
17.
S. M. Sze, Physics of Semiconductors Devices (Wiley, New York, 1981), p. 29.
18.
Y.
Wei
,
R. M.
Wallace
, and
A. C.
Seabaugh
,
Appl. Phys. Lett.
69
,
1270
(
1996
).
Google Scholar
 
19.
G. Lucovsky (private communication).
This content is only available via PDF.
© 2001 American Institute of Physics.
2001
American Institute of Physics
You do not currently have access to this content.