$N$-side illuminated microcrystalline silicon solar cells Available to Purchase

Thin-film microcrystalline silicon solar cells illuminated through the n layer were studied and compared with classical p-layer illuminated cells. To investigate the corresponding charge carrier extraction properties, variation of the intrinsic absorber layer thickness was carried out. It was found that the $J–V$ characteristic and the quantum efficiency of the n- and p-side illuminated cells are almost identical in the thickness range investigated, up to 7 μm. No differences in the collection of photogenerated electrons or holes are observed. Hence, the illumination side of $μc-Si:H$ single junction solar cells of conventional thickness may be randomly chosen without adverse effect on their performance.