Distributed Bragg reflectors based on multilayer stacks have been grown by plasma-assisted molecular-beam epitaxy on GaN templates. The nominal Al composition ranged from 30% to 45%, and the layer thicknesses of the ten-period stack were designed for a target wavelength of 510 nm. Transmission electron microscopy data reveal periodic structures where (Al,Ga)N on the GaN interface is sharper than GaN on the (Al,Ga)N one. X-ray diffraction spectra fitted to a dynamic diffraction simulation model yield an estimate of the layer thicknesses, Al%, and lattice strain. Reflectivity values above 50% at 510 nm have been reproducibly achieved, in very good agreement with the results of the matrix-method simulation.
High-quality distributed Bragg reflectors based on multilayers grown by molecular-beam epitaxy
S. Fernández, F. B. Naranjo, F. Calle, M. A. Sánchez-Garcı́a, E. Calleja, P. Vennegues, A. Trampert, K. H. Ploog; High-quality distributed Bragg reflectors based on multilayers grown by molecular-beam epitaxy. Appl. Phys. Lett. 1 October 2001; 79 (14): 2136–2138. https://doi.org/10.1063/1.1401090
Download citation file: