Here, we report results of both traditional current mode and current integration mode time-of-flight (TOF) measurements on the electroluminescent polyfluorene copolymer poly(9,9-dioctylfluorene-co-benzothiadiazole) (BT). Current mode TOF shows a strong but dispersive electron transport signal. The mobility derived from the current integration mode transit time increases with decreasing film thickness as expected for dispersive transport. The fastest carriers in the photogenerated carrier packet are estimated to have mobilities of order at applied fields of 0.5 MV/cm. Holes are heavily trapped close to the interface at which they are photogenerated. The TOF signals decay with repeated measurement and remains constant with applied field. The transport properties of BT are thus in complete contrast to those of other polyfluorenes which show high-mobility nondispersive hole transport but weak and highly dispersive electron transport.
Skip Nav Destination
Article navigation
1 October 2001
Research Article|
October 01 2001
Dispersive electron transport in an electroluminescent polyfluorene copolymer measured by the current integration time-of-flight method
Alasdair J. Campbell;
Alasdair J. Campbell
Physics Department, The Blackett Laboratory, Imperial College, Prince Consort Street, London, SW7 2BZ, United Kingdom
Search for other works by this author on:
Donal D. C. Bradley;
Donal D. C. Bradley
Physics Department, The Blackett Laboratory, Imperial College, Prince Consort Street, London, SW7 2BZ, United Kingdom
Search for other works by this author on:
Homer Antoniadis
Homer Antoniadis
Agilent Technologies, Palo Alto, California 94304
Search for other works by this author on:
Appl. Phys. Lett. 79, 2133–2135 (2001)
Article history
Received:
May 29 2001
Accepted:
July 20 2001
Citation
Alasdair J. Campbell, Donal D. C. Bradley, Homer Antoniadis; Dispersive electron transport in an electroluminescent polyfluorene copolymer measured by the current integration time-of-flight method. Appl. Phys. Lett. 1 October 2001; 79 (14): 2133–2135. https://doi.org/10.1063/1.1406143
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Superconducting flip-chip devices using indium microspheres on Au-passivated Nb or NbN as under-bump metallization layer
Achintya Paradkar, Paul Nicaise, et al.
Related Content
Polarization-sensitive photoconductivity in aligned polyfluorene layers
Appl. Phys. Lett. (June 2002)
White electroluminescence from polyfluorene chemically doped with 1,8-napthalimide moieties
Appl. Phys. Lett. (September 2004)
Bright white light electroluminescent devices based on a dye-dispersed polyfluorene derivative
Appl. Phys. Lett. (August 2004)
Vertically segregated polymer-blend photovoltaic thin-film structures through surface-mediated solution processing
Appl. Phys. Lett. (March 2002)