We have performed systematic studies of the optical gain and its saturation in (In, Ga)N/GaN/(Al, Ga)N laser structures that depend on the excitation density and number of quantum wells. The unsaturated gain factor which was obtained by the variable stripe-length method increases with excitation power, i.e., increasing modal gain. The gain factor also increases with a decreasing number of quantum wells, as is shown by the investigation of a series of laser structures with 3, 4, 5, and 10 quantum wells for fixed modal gain. Values up to 40 dB at 300 K were measured. Thermal activation energies obtained by temperature dependent photoluminescence measurements yield information on the influence of nonradiative recombination processes on optical gain saturation.
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17 September 2001
Research Article|
September 17 2001
Optical gain and saturation in nitride-based laser structures
M. Vehse;
M. Vehse
Institut für Festkörperphysik, Universität Bremen, P.O. Box 330440, D-28334 Bremen, Germany
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P. Michler;
P. Michler
Institut für Festkörperphysik, Universität Bremen, P.O. Box 330440, D-28334 Bremen, Germany
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O. Lange;
O. Lange
Institut für Festkörperphysik, Universität Bremen, P.O. Box 330440, D-28334 Bremen, Germany
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M. Röwe;
M. Röwe
Institut für Festkörperphysik, Universität Bremen, P.O. Box 330440, D-28334 Bremen, Germany
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J. Gutowski;
J. Gutowski
Institut für Festkörperphysik, Universität Bremen, P.O. Box 330440, D-28334 Bremen, Germany
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S. Bader;
S. Bader
Osram Optosemiconductors GmbH & Company OHG, D-93049 Regensburg, Germany
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H.-J. Lugauer;
H.-J. Lugauer
Osram Optosemiconductors GmbH & Company OHG, D-93049 Regensburg, Germany
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G. Brüderl;
G. Brüderl
Osram Optosemiconductors GmbH & Company OHG, D-93049 Regensburg, Germany
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A. Weimar;
A. Weimar
Osram Optosemiconductors GmbH & Company OHG, D-93049 Regensburg, Germany
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A. Lell;
A. Lell
Osram Optosemiconductors GmbH & Company OHG, D-93049 Regensburg, Germany
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V. Härle
V. Härle
Osram Optosemiconductors GmbH & Company OHG, D-93049 Regensburg, Germany
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M. Vehse
P. Michler
O. Lange
M. Röwe
J. Gutowski
S. Bader
H.-J. Lugauer
G. Brüderl
A. Weimar
A. Lell
V. Härle
Institut für Festkörperphysik, Universität Bremen, P.O. Box 330440, D-28334 Bremen, Germany
Appl. Phys. Lett. 79, 1763–1765 (2001)
Article history
Received:
February 21 2001
Accepted:
July 13 2001
Citation
M. Vehse, P. Michler, O. Lange, M. Röwe, J. Gutowski, S. Bader, H.-J. Lugauer, G. Brüderl, A. Weimar, A. Lell, V. Härle; Optical gain and saturation in nitride-based laser structures. Appl. Phys. Lett. 17 September 2001; 79 (12): 1763–1765. https://doi.org/10.1063/1.1401780
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