Ferroelectric SrBi2Ta2O9 (SBT) thin films were deposited onto the Bi2O3 buffered Pt/Ti/SiO2/Si substrates using liquid-delivery metalorganic chemical-vapor deposition. The SBT films with a 5-nm-thick Bi2O3 buffer layer on a Pt bottom electrode showed (115) orientation stronger than those without the Bi2O3 buffer layer after annealing at 750 °C. The Bi2O3 buffer layer in Pt/Bi2O3/SBT/Bi2O3/Pt/Ti/SiO2/Si capacitors effectively prevents the evaporation of Bi through the Pt top electrode and diffusion of Bi into the Pt bottom electrode. The remanent polarization and leakage current densities of SBT films with Bi2O3 buffer layers were improved significantly in comparison with those for the films without the Bi2O3 buffer layer. The remanent polarization (2Pr) and coercive field (Ec) of SBT films without and with the Bi2O3 buffer layer annealed at 750 °C were 12 and 23 μC/cm2, 57 and 38 kV/cm at an applied voltage of 5 V, respectively.

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