We have studied the influence of hydrostatic pressure on the light emission from a strained GaN/AlGaN multiquantum well system. We have found that the pressure coefficients of the photoluminescence peak energies are dramatically reduced with respect to that of GaN energy gap and this reduction is a function of the quantum well thickness. The decrease of the light emission pressure coefficient may be as large as 30% for a 32 monolayer (8 nm) thick quantum well. We explain this effect by the hydrostatic-pressure-induced increase of the piezoelectric field in quantum structures. Model calculations based on the method and linear elasticity theory reproduce the experimental results well, demonstrating that this increase may be explained by small anisotropy of the wurtzite lattice of GaN and a specific interplay of elastic constants and values of the piezoelectric tensor.
Skip Nav Destination
,
,
,
,
,
Article navigation
3 September 2001
Research Article|
September 03 2001
Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells Available to Purchase
S. P. Łepkowski;
S. P. Łepkowski
High Pressure Research Center, “Unipress,” ulica Sokolowska 29/37, 01-142 Warsaw, Poland
Search for other works by this author on:
H. Teisseyre;
H. Teisseyre
High Pressure Research Center, “Unipress,” ulica Sokolowska 29/37, 01-142 Warsaw, Poland
Search for other works by this author on:
T. Suski;
T. Suski
High Pressure Research Center, “Unipress,” ulica Sokolowska 29/37, 01-142 Warsaw, Poland
Search for other works by this author on:
P. Perlin;
P. Perlin
High Pressure Research Center, “Unipress,” ulica Sokolowska 29/37, 01-142 Warsaw, Poland
Search for other works by this author on:
N. Grandjean;
N. Grandjean
CRHEA–Centre National de la Recherche Scientifique, 06560 Valbonne, France
Search for other works by this author on:
J. Massies
J. Massies
CRHEA–Centre National de la Recherche Scientifique, 06560 Valbonne, France
Search for other works by this author on:
S. P. Łepkowski
H. Teisseyre
T. Suski
P. Perlin
N. Grandjean
J. Massies
High Pressure Research Center, “Unipress,” ulica Sokolowska 29/37, 01-142 Warsaw, Poland
Appl. Phys. Lett. 79, 1483–1485 (2001)
Article history
Received:
February 12 2001
Accepted:
July 03 2001
Citation
S. P. Łepkowski, H. Teisseyre, T. Suski, P. Perlin, N. Grandjean, J. Massies; Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells. Appl. Phys. Lett. 3 September 2001; 79 (10): 1483–1485. https://doi.org/10.1063/1.1396631
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Attosecond physics and technology
O. Alexander, D. Ayuso, et al.
Significant improvement of breakdown voltage of Al0.86Ga0.14N Schottky barrier diodes by atomic layer etching
Tingang Liu, Zhiyuan Liu, et al.
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Related Content
Influence of the electronic states anisotropy on the band gap pressure coefficient of In x Ga 1 − x N alloys
J. Appl. Phys. (December 2009)
Study of light emission from GaN/AlGaN quantum wells under power-dependent excitation
J. Appl. Phys. (June 2002)
Different pressure coefficients of the light emission in cubic and hexagonal InGaN/GaN quantum wells
Appl. Phys. Lett. (July 2002)
Investigation of the piezoelectric polarization in (In,Ga)N/GaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy
J. Appl. Phys. (July 2002)
Strong electric field and nonuniformity effects in Ga N ∕ Al N quantum dots revealed by high pressure studies
Appl. Phys. Lett. (July 2006)