We have studied the influence of hydrostatic pressure on the light emission from a strained GaN/AlGaN multiquantum well system. We have found that the pressure coefficients of the photoluminescence peak energies are dramatically reduced with respect to that of GaN energy gap and this reduction is a function of the quantum well thickness. The decrease of the light emission pressure coefficient may be as large as 30% for a 32 monolayer (8 nm) thick quantum well. We explain this effect by the hydrostatic-pressure-induced increase of the piezoelectric field in quantum structures. Model calculations based on the method and linear elasticity theory reproduce the experimental results well, demonstrating that this increase may be explained by small anisotropy of the wurtzite lattice of GaN and a specific interplay of elastic constants and values of the piezoelectric tensor.
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3 September 2001
Research Article|
September 03 2001
Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells
S. P. Łepkowski;
S. P. Łepkowski
High Pressure Research Center, “Unipress,” ulica Sokolowska 29/37, 01-142 Warsaw, Poland
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H. Teisseyre;
H. Teisseyre
High Pressure Research Center, “Unipress,” ulica Sokolowska 29/37, 01-142 Warsaw, Poland
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T. Suski;
T. Suski
High Pressure Research Center, “Unipress,” ulica Sokolowska 29/37, 01-142 Warsaw, Poland
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P. Perlin;
P. Perlin
High Pressure Research Center, “Unipress,” ulica Sokolowska 29/37, 01-142 Warsaw, Poland
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N. Grandjean;
N. Grandjean
CRHEA–Centre National de la Recherche Scientifique, 06560 Valbonne, France
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J. Massies
J. Massies
CRHEA–Centre National de la Recherche Scientifique, 06560 Valbonne, France
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Appl. Phys. Lett. 79, 1483–1485 (2001)
Article history
Received:
February 12 2001
Accepted:
July 03 2001
Citation
S. P. Łepkowski, H. Teisseyre, T. Suski, P. Perlin, N. Grandjean, J. Massies; Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells. Appl. Phys. Lett. 3 September 2001; 79 (10): 1483–1485. https://doi.org/10.1063/1.1396631
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