Cooling of electrons in a heavily doped silicon by quasiparticle tunneling using a superconductor–semiconductor–superconductor double-Schottky-junction structure is demonstrated at low temperatures. In this work, we use Al as the superconductor and thin silicon-on-insulator (SOI) film as the semiconductor. The electron–phonon coupling is measured for the SOI film and the low value of the coupling is shown to be the origin of the observed significant cooling effect.
REFERENCES
1.
2.
3.
A. J.
Manninen
, J. K.
Suoknuuti
, M. M.
Leivo
, and J. P.
Pekola
, Appl. Phys. Lett.
74
, 3020
(1999
).4.
R.
Leoni
, G.
Arena
, M. G.
Castellano
, and G.
Torrioli
, J. Appl. Phys.
85
, 3877
(1999
).5.
J. P.
Pekola
, D. V.
Anghel
, T. I.
Suppula
, J. K.
Suoknuuti
, A. J.
Manninen
, and M.
Manninen
, Appl. Phys. Lett.
76
, 2782
(2000
).6.
A.
Luukanen
, M. M.
Leivo
, J. K.
Suoknuuti
, A. J.
Manninen
, and J. P.
Pekola
, J. Low Temp. Phys.
120
, 281
(2000
).7.
8.
9.
10.
11.
See, e.g., M. Tinkham, Introduction to Superconductivity, 2nd ed. (McGraw-Hill, New York, 1996).
12.
13.
M. L.
Roukes
, M. R.
Freeman
, R. S.
Germain
, and R. C.
Richardson
, Phys. Rev. Lett.
55
, 422
(1985
).14.
15.
16.
17.
This content is only available via PDF.
© 2001 American Institute of Physics.
2001
American Institute of Physics
You do not currently have access to this content.