We have used pulsed-slow-positron-beam-based positron lifetime spectroscopy to investigate the nature of acceptors and charge states of vacancy-type defects in low-energy proton-implanted 6H-SiC(H). We can infer from the temperature dependence of the lifetime spectra that neutral and negatively charged vacancy clusters exist in the track region. Depending on annealing, they give rise to positron lifetimes of 257±2, 281±4, and 345±2 ps, respectively. The 281 ps cluster likely has an ionization level near the middle of the band gap. By comparison with theory, the 257 and 280 ps are identified as and clusters, respectively. In addition, other acceptors of ionic type act as strong trapping centers at low temperature K). Neutral monovacancy-like complexes are also detected with a lifetime of 160±2 after 900 °C annealing.
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26 February 2001
Research Article|
February 26 2001
Evidence for negatively charged vacancy defects in 6H-SiC after low-energy proton implantation
D. T. Britton;
D. T. Britton
Centre d’Etudes et de Recherches par Irradiation, Centre National de la Recherche Scientifique, 3a rue de la Férollerie, F-45100 Orléans, France
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M.-F. Barthe;
M.-F. Barthe
Centre d’Etudes et de Recherches par Irradiation, Centre National de la Recherche Scientifique, 3a rue de la Férollerie, F-45100 Orléans, France
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C. Corbel;
C. Corbel
Centre d’Etudes et de Recherches par Irradiation, Centre National de la Recherche Scientifique, 3a rue de la Férollerie, F-45100 Orléans, France
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A. Hempel;
A. Hempel
Centre d’Etudes et de Recherches par Irradiation, Centre National de la Recherche Scientifique, 3a rue de la Férollerie, F-45100 Orléans, France
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L. Henry;
L. Henry
Centre d’Etudes et de Recherches par Irradiation, Centre National de la Recherche Scientifique, 3a rue de la Férollerie, F-45100 Orléans, France
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P. Desgardin;
P. Desgardin
Centre d’Etudes et de Recherches par Irradiation, Centre National de la Recherche Scientifique, 3a rue de la Férollerie, F-45100 Orléans, France
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W. Bauer-Kugelmann;
W. Bauer-Kugelmann
Universität der Bundeswehr München, Institut für Nukleare Festkörperphysik, D-85577 Neubiberg, Germany
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G. Kögel;
G. Kögel
Universität der Bundeswehr München, Institut für Nukleare Festkörperphysik, D-85577 Neubiberg, Germany
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P. Sperr;
P. Sperr
Universität der Bundeswehr München, Institut für Nukleare Festkörperphysik, D-85577 Neubiberg, Germany
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W. Triftshäuser
W. Triftshäuser
Universität der Bundeswehr München, Institut für Nukleare Festkörperphysik, D-85577 Neubiberg, Germany
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D. T. Britton
M.-F. Barthe
C. Corbel
A. Hempel
L. Henry
P. Desgardin
W. Bauer-Kugelmann
G. Kögel
P. Sperr
W. Triftshäuser
Centre d’Etudes et de Recherches par Irradiation, Centre National de la Recherche Scientifique, 3a rue de la Férollerie, F-45100 Orléans, France
Appl. Phys. Lett. 78, 1234–1236 (2001)
Article history
Received:
September 25 2000
Accepted:
December 19 2000
Citation
D. T. Britton, M.-F. Barthe, C. Corbel, A. Hempel, L. Henry, P. Desgardin, W. Bauer-Kugelmann, G. Kögel, P. Sperr, W. Triftshäuser; Evidence for negatively charged vacancy defects in 6H-SiC after low-energy proton implantation. Appl. Phys. Lett. 26 February 2001; 78 (9): 1234–1236. https://doi.org/10.1063/1.1350961
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