Hydrogenation of 6H–SiC (0001) and (0001̄) is achieved by high-temperature hydrogen treatment. Both surfaces show a low-energy electron diffraction pattern representative of unreconstructed surfaces of extremely high crystallographic order. On SiC(0001), hydrogenation is confirmed by the observation of sharp Si–H stretching modes. The absence of surface band bending for n- and p-type samples is indicative of electronically passivated surfaces with densities of charged surface states in the gap of below 7×1010cm−2 for p-type and 1.7×1012cm−2 for n- type samples, respectively. Even after two days in air, the surfaces show no sign of surface oxide in x-ray photoelectron spectroscopy.

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