We report on the Raman analysis of wurtzite single-crystalline bulk AlN under hydrostatic pressures up to 10 GPa. The pressure dependence of the AlN phonon frequencies was investigated. Mode Grüneisen parameters of 1.39, 1.57, 1.71, 0.93, and 1.26 were determined for the A1(TO),E1(TO),E2(high),A1(LO), and the quasi-longitudinal optical phonons, respectively. Recent theoretical calculations underestimate the pressure-induced frequency shift of the AlN phonons by about 20%–30%. Mode Grüneisen parameters of AlN were compared to those of GaN.

1.
H.
Siegle
,
A.
Hoffmann
,
L.
Eckey
,
C.
Thomsen
,
J.
Christen
,
F.
Bertram
,
D.
Schmidt
,
D.
Rudloff
, and
K.
Hiramatsu
,
Appl. Phys. Lett.
71
,
2490
(
1997
).
2.
M.
Holtz
,
M.
Seon
,
T.
Prokofyeva
,
H.
Temkin
,
R.
Singh
,
F. P.
Dabkowski
, and
T. D.
Moustakas
,
Appl. Phys. Lett.
75
,
1757
(
1999
).
3.
J. P.
Ibbetson
,
P. T.
Fini
,
K. D.
Ness
,
S. P.
DenBaars
,
J. S.
Speck
, and
U. K.
Mishra
,
Appl. Phys. Lett.
77
,
250
(
2000
).
4.
P.
Ramvall
,
Y.
Aoyagi
,
A.
Kuramata
,
P.
Hacke
, and
K.
Horino
,
Appl. Phys. Lett.
74
,
3866
(
1999
).
5.
J.-M.
Wagner
and
F.
Bechstedt
,
Phys. Rev. B
62
,
4526
(
2000
).
6.
P.
Perlin
,
C.
Jauberthie-Carillon
,
J. P.
Itie
,
A. S.
Miguel
,
I.
Grzegory
, and
A.
Polian
,
Phys. Rev. B
45
,
83
(
1992
).
7.
F.
Demangeot
,
J.
Frandon
,
M. A.
Renucci
,
O.
Briot
,
B.
Gil
, and
R. L.
Aulombard
,
Solid State Commun.
100
,
207
(
1996
).
8.
Y. Yu.
Davydov
,
N. S.
Averkiev
,
I. N.
Goncharuk
,
D. K.
Nelson
,
I. P.
Nikitina
,
A. S.
Polkovnikov
,
A. N.
Smirnov
,
M. A.
Jacobson
, and
O. K.
Seminova
,
J. Appl. Phys.
82
,
5097
(
1997
).
9.
J. H.
Edgar
,
L. H.
Robins
,
S. E.
Coatney
,
L.
Liu
,
J.
Chaudhuri
,
K.
Ignatiev
, and
Z.
Rek
,
Mater. Sci. Forum
338–342
,
1599
(
2000
).
10.
L. J.
Schowalter
,
Y.
Shusterman
,
R.
Wang
,
L.
Bhat
,
G.
Arunmozhi
, and
G. A.
Slack
,
MRS Internet J. Nitride Semicond. Res.
4S1
,
G3
.
76
(
1999
).
11.
P.
Perlin
,
A.
Polian
, and
T.
Suski
,
Phys. Rev. B
47
,
2874
(
1993
).
12.
M.
Kuball
,
J. M.
Hayes
,
Ying
Shi
, and
J. H.
Edgar
,
Appl. Phys. Lett.
77
,
1958
(
2000
).
13.
H. K.
Mao
,
P. M.
Bell
,
J. W.
Shaner
, and
D. J.
Steinberg
,
J. Appl. Phys.
49
,
3276
(
1978
).
14.
D. J.
Dunstan
and
W.
Scherrer
,
Rev. Sci. Instrum.
59
,
627
(
1988
).
15.
I. L.
Spain
and
D. J.
Dunstan
,
J. Phys. E
22
,
923
(
1989
).
16.
R.
Loudon
,
Adv. Phys.
13
,
423
(
1964
).
17.
T.
Azuhata
,
T.
Sota
,
K.
Suzuki
, and
S.
Nakamura
,
J. Phys.: Condens. Matter
7
,
L129
(
1995
).
18.
F.
Demangeot
,
J.
Groenen
,
J.
Frandon
,
M. A.
Renucci
,
O.
Briot
,
S.
Clur
, and
R. L.
Aulombard
,
Appl. Phys. Lett.
72
,
2674
(
1998
).
19.
J. M.
Hayes
,
M.
Kuball
,
Ying
Shi
, and
J. H.
Edgar
,
Jpn. J. Appl. Phys., Part 2
39
,
L710
(
2000
).
20.
A. Polian, in Properties, Processing and Applications of Gallium Nitride and Related Semiconductors, edited by J. H. Edgar, S. Strite, I. Akasaki, H. Amano, and C. Wetzel (INSPEC, London, 1999), pp. 11–20.
21.
J. A.
Sanjurjo
,
E.
López-Cruz
,
P.
Vogl
, and
M.
Cardona
,
Phys. Rev. B
28
,
4579
(
1983
).
22.
L. E.
McNeil
,
M.
Grimsditch
, and
R. H.
French
,
J. Am. Ceram. Soc.
76
,
1132
(
1993
).
23.
M. D.
Frogley
,
D. J.
Dunstan
, and
W.
Palosz
,
Solid State Commun.
107
,
537
(
1998
).
This content is only available via PDF.
You do not currently have access to this content.