First-order Raman spectra from nanocrystalline semiconductors reflect the influence of crystallite sizes on the Raman shifts and line shapes. A Gaussian distribution in crystallite sizes is explicitly included to calculate the Raman spectra of porous silicon. Several porous-silicon samples were prepared using electrochemical anodization, and Raman as well as photoluminescence measurements were carried out on the same spots using a micro-Raman probe. The size distribution obtained from fitting the Raman data using our procedure is able to predict the photoluminescence accurately in the quantum-confinement models.

1.
H.
Takagi
,
H.
Ogawa
,
Y.
Yamazaki
,
A.
Ishizaki
, and
T.
Nakagiri
,
Appl. Phys. Lett.
56
,
2379
(
1990
).
2.
H.
Xia
,
Y. L.
He
,
L. C.
Wang
,
W.
Zhang
,
X. N.
Liu
,
X. K.
Zhang
,
D.
Fang
, and
H. E.
Jackson
,
J. Appl. Phys.
78
,
6705
(
1995
).
3.
P. F.
Trwoga
,
A. J.
Kenyon
, and
C. W.
Pitt
,
J. Appl. Phys.
83
,
3789
(
1998
).
4.
Z. H.
Lu
,
D. J.
Lockwood
, and
J. M.
Baribeau
,
Nature (London)
378
,
258
(
1995
).
5.
See, for example,
A. G.
Cullis
,
L. T.
Canham
, and
P. D. J.
Calcott
,
J. Appl. Phys.
82
,
909
(
1997
), and references therein.
6.
J. R.
Proot
,
C.
Delrue
, and
G.
Allen
,
Appl. Phys. Lett.
61
,
1948
(
1992
).
7.
G. C.
John
and
V. A.
Singh
,
Phys. Rev. B
50
,
5329
(
1994
).
8.
H.
Richter
,
Z. P.
Wang
, and
L.
Ley
,
Solid State Commun.
39
,
625
(
1981
).
9.
I. H.
Campbell
and
P. M.
Fauchet
,
Solid State Commun.
58
,
739
(
1986
).
10.
Z.
Iqbal
and
S.
Veprek
,
J. Phys. C
15
,
377
(
1982
).
11.
Y. A.
Pasep
,
M. T. O.
Silva
,
J. C.
Galzerani
,
N. T.
Moshegore
, and
P.
Basmaji
,
Phys. Rev. B
58
,
10683
(
1998
).
12.
Z.
Sui
,
P. P.
Leong
,
I. P.
Hermar
,
G. S.
Higashi
, and
H.
Temkin
,
Appl. Phys. Lett.
60
,
2086
(
1992
).
13.
H.
Münder
,
C.
Andrzejak
,
M. G.
Berger
,
U.
Klemradt
,
H.
Luth
,
R.
Herino
, and
M.
Ligeon
,
Thin Solid Films
221
,
27
(
1992
).
14.
T.
Kanata
,
H.
Murai
, and
K.
Kubota
,
J. Appl. Phys.
61
,
969
(
1986
).
15.
C. E.
Bottani
,
C.
Mantini
,
P.
Milani
,
M.
Manfredini
,
A.
Stella
,
P.
Tognini
,
P.
Cheyssac
, and
R.
Kofman
,
Appl. Phys. Lett.
69
,
2409
(
1996
).
16.
M. J.
Lipp
,
V. G.
Baonza
,
W. J.
Evans
, and
H. E.
Lorentzana
,
Phys. Rev. B
56
,
5978
(
1997
).
17.
M.
Binder
,
T.
Edelmann
,
T. H.
Metzger
,
G.
Mauckner
,
G.
Goerigk
, and
J.
Peisl
,
Thin Solid Films
276
,
65
(
1996
).
18.
M.
Ehbrecht
,
B.
Kohn
,
F.
Huisken
,
M. A.
Laguna
, and
V.
Paillard
,
Phys. Rev. B
56
,
6958
(
1997
).
19.
J. M.
Perez
,
J.
Villalobos
,
P.
McNeill
,
J.
Prasad
,
R.
Cheek
,
J.
Kelber
,
J. P.
Estrera
,
P. D.
Stevens
, and
R.
Glosser
,
Appl. Phys. Lett.
61
,
563
(
1992
).
20.
I.
Berbezier
and
A.
Halimaoui
,
J. Appl. Phys.
74
,
5421
(
1993
).
21.
J. B.
Khurgin
,
E. W.
Forsythe
,
G. S.
Tompa
, and
B. A.
Khan
,
Appl. Phys. Lett.
69
,
1241
(
1996
).
22.
Y.
Kanemitsu
,
H.
Uto
,
Y.
Masumoto
,
T.
Matsumoto
,
T.
Futagi
, and
H.
Mimura
,
Phys. Rev. B
48
,
2827
(
1993
).
23.
Md. N. Islam and S. Kumar (unpublished).
24.
S.
Schmitt-Rink
,
D. A. B.
Miller
, and
D. S.
Chemla
,
Phys. Rev. B
35
,
8113
(
1987
).
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