We propose an improved method of thermally stimulated currents (TSC) spectra analysis in the case of diodes having a concentration of traps higher than that of doping impurities. Beside the calculation of trap concentrations from TSC peaks analysis, the method allows us to evaluate the density and the type of the very deep trapping level which, due to the contribution of leakage current, can not be detected in a real TSC experiment. The proposed method is applied to a Silicon diode irradiated with
REFERENCES
1.
U.
Biggeri
, E.
Borchi
, M.
Bruzzi
, Z.
Li
, and S.
Lazanu
, IEEE Trans. Nucl. Sci.
41
, 964
(1994
).2.
H.
Feick
, E.
Fretwurst
, P.
Heydarpoor
, G.
Lindstroem
, and M.
Moll
, Nucl. Instrum. Methods Phys. Res. A
388
, 323
(1997
).3.
M.
Moll
, H.
Feick
, E.
Fretwurst
, and G.
Lindstroem
, Nucl. Instrum. Methods Phys. Res. A
409
, 194
(1998
).4.
Michael Moll, PhD thesis, DESY, 1999.
5.
6.
I. Pintilie, C. Tivarus, L. Pintilie, M. Moll, E. Fretwurst, and G. Lindstroem, Proceedings of the Second ENDEASD Workshop (Kista, Stockholm, Sweden, 27–29, June, 2000), edited by C. Claeys, pp. 79–88.
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© 2001 American Institute of Physics.
2001
American Institute of Physics
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