A correlation between bulk leakage current density and threading dislocation density in silicon–germanium mesa-isolated diodes fabricated on relaxed graded buffer layers is presented. Si0.75Ge0.25 p-i-n diodes were grown on SiGe graded buffers with different grading rates. Graded buffers with different grading rates yielded “virtual substrates” with varying densities of threading dislocations. Bulk leakage current densities were differentiated from surface leakage currents by using p-i-n diodes with different areas. We demonstrate that the increase in bulk leakage current density in SiGe p-i-n diodes can be modeled by generation processes assisted by deep levels related to threading dislocations.

Topics
Crystallographic defects, Semiconductors, PIN diode, Electrical properties and parameters
1.
M. T.
Currie
,
S. B.
Samavedam
,
T. A.
Langdo
,
C. W.
Leitz
, and
E. A.
Fitzgerald
,
Appl. Phys. Lett.
72
,
1718
(
1998
).
Google Scholar
 
2.
Y.
Takano
,
M.
Hisaka
,
N.
Fujii
,
K.
Suzuki
,
K.
Kuwahara
, and
S.
Fuke
,
Appl. Phys. Lett.
73
,
2917
(
1998
).
Google Scholar
 
3.
H.-C.
Luan
,
D. R.
Lim
,
K. K.
Lee
,
K. M.
Chen
,
J. G.
Sandland
,
K.
Wada
, and
L. C.
Kimerling
,
Appl. Phys. Lett.
75
,
2909
(
1999
).
Google Scholar
 
4.
L.
Colace
,
G.
Masini
,
G.
Assanto
,
H.-C.
Luan
,
K.
Wada
, and
L. C.
Kimerling
,
Appl. Phys. Lett.
76
,
1231
(
2000
).
Google Scholar
 
5.
E. A.
Fitzgerald
,
Y.-H.
Xie
,
D.
Monroe
,
P. J.
Silverman
,
J. M.
Kuo
,
A. R.
Kortan
,
F. A.
Thiel
, and
B. E.
Weir
,
J. Vac. Sci. Technol. B
10
,
1807
(
1992
).
Google Scholar
 
6.
F. M.
Ross
,
R.
Hull
,
D.
Bahnck
,
J. C.
Bean
,
L. J.
Peticolas
, and
C. A.
King
,
Appl. Phys. Lett.
62
,
1426
(
1993
).
Google Scholar
 
7.
P.
Kozodoy
,
J. P.
Ibbetson
,
H.
Marchand
,
P. T.
Fini
,
S.
Keller
,
J. S.
Speck
,
S. P.
DenBaars
, and
U. K.
Mishra
,
Appl. Phys. Lett.
73
,
975
(
1998
).
Google Scholar
 
8.
J. R.
Patel
and
L. C.
Kimerling
,
Cryst. Res. Technol.
16
,
187
(
1981
).
Google Scholar
 
9.
L. C.
Kimerling
,
J. R.
Patel
,
J. L.
Benton
, and
P. E.
Freeland
,
Inst. Phys. Conf. Ser.
59
,
401
(
1981
).
Google Scholar
 
10.
P. N.
Grillot
,
S. A.
Ringel
,
E. A.
Fitzgerald
,
G. P.
Watson
, and
Y. H.
Xie
,
J. Appl. Phys.
77
,
3248
(
1995
).
Google Scholar
 
11.
G. P.
Watson
,
E. A.
Fitzgerald
,
Y.-H.
Xie
, and
D.
Monroe
,
J. Appl. Phys.
75
,
263
(
1994
).
Google Scholar
 
12.
E. A.
Fitzgerald
,
Y.-H.
Xie
,
D.
Monroe
,
P. J.
Silverman
,
J. M.
Kuo
,
A. R.
Kortan
,
F. A.
Thiel
, and
B. E.
Weir
,
J. Vac. Sci. Technol. B
10
,
1807
(
1992
).
Google Scholar
 
13.
E. A.
Fitzgerald
,
S. B.
Samavedam
,
Y. H.
Xie
, and
L. M.
Giovane
,
J. Vac. Sci. Technol. A
15
,
1048
(
1997
).
Google Scholar
 
14.
G. E.
Stillman
,
L. W.
Cook
,
N.
Tabatabaie
,
G. E.
Bulman
, and
V. M.
Robbins
,
IEEE Trans. Electron Devices
ED-30
,
364
(
1983
).
Google Scholar
 
15.
H. J.
Leamy
,
J. Appl. Phys.
53
,
R51
(
1982
).
Google Scholar
 
16.
P. N.
Grillot
,
S. A.
Ringel
, and
E. A.
Fitzgerald
,
J. Electron. Mater.
25
,
1028
(
1996
).
Google Scholar
 
This content is only available via PDF.
© 2001 American Institute of Physics.
2001
American Institute of Physics
You do not currently have access to this content.