Local structure of uncapped and Si-capped Ge quantum dots on Si(100) has been probed by extended x-ray absorption fine structure and x-ray absorption near-edge structure spectroscopy. It is found that the uncapped Ge dots are partially oxidized and partially alloyed with Si. The amount of Ge present in the Ge phase is found to be about 20–30%. In the Si-capped sample, Ge is found to be dissolved in silicon, the fraction of Ge atoms existing as a Ge phase being less than 10%.

Topics
Quantum dots, X-ray absorption spectroscopy, Extended X-ray absorption fine structure, Chemical elements
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2001
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