We report on the growth of high-electron-mobility AlGaN/GaN heterostructures on silicon (111) substrates by molecular-beam epitaxy using ammonia as the nitrogen source. Crack-free GaN layers up to 3 μm are obtained. Their optical properties are similar to those commonly obtained for films grown on sapphire, but photoluminescence spectra indicate that GaN on Si(111) is in a tensile strain state which increases with the epitaxial layer thickness. Such uncracked GaN buffer layers grown on Si(111) have been used to achieve undoped AlGaN/GaN heterostructures having electron mobilities exceeding 1600 cm2/V s at room temperature and 7500 cm2/V s at 20 K.
High-electron-mobility AlGaN/GaN heterostructures grown on Si(111) by molecular-beam epitaxy
F. Semond, P. Lorenzini, N. Grandjean, J. Massies; High-electron-mobility AlGaN/GaN heterostructures grown on Si(111) by molecular-beam epitaxy. Appl. Phys. Lett. 15 January 2001; 78 (3): 335–337. https://doi.org/10.1063/1.1339264
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