Planar geometry Schottky barrier photodiodes designed for visible-blind ultraviolet detection have been fabricated. They are based on ZnMgBeSe alloys grown by molecular-beam epitaxy. High crystalline quality is achieved, which leads to a high responsivity (0.17 A/W at 375 nm) and a sharp cutoff of more than three orders of magnitude. As attested by the linear variation of the photocurrent with the optical excitation, there is no internal gain mechanism. A detectivity of is obtained showing that low-noise devices with high sensitivity have been fabricated.
Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes
F. Vigué, E. Tournié, J.-P. Faurie, E. Monroy, F. Calle, E. Muñoz; Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes. Appl. Phys. Lett. 25 June 2001; 78 (26): 4190–4192. https://doi.org/10.1063/1.1381415
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