The dielectric permittivity, tunability (Δε/ε), and loss tangent of Ba1−xSrxTiO3 (BST) films grown by pulsed-laser deposition are studied by near-field microwave microscopy. Based on theoretical simulations, a method is developed to measure the uniaxial dielectric anisotropy, ε, in BST films grown at different oxygen pressures. The measured ε decreases with the film-growth oxygen pressure, consistent with the structural anisotropy. The films prepared at 50 mT, with ε≈ε, have the highest permittivity, tunability, and figure of merit.

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