Characterization of electron-irradiated $n-GaN$

Using deep level transient spectroscopy, we have investigated the electron trap defects introduced in $n-GaN$ grown using the epitaxial lateral overgrowth technique during high energy electron irradiation from a $Sr90$ radionuclide source. The results indicate that the major electron-irradiation-induced defect labeled ER3 is not a single defect level but is made up of at least three defect levels (ER3b–ER3d). One of these defects, ER3d, has an activation energy and introduction rate of 0.22 eV and 0.43 cm⁻¹, respectively. The total introduction rate of the three defects (ER3b–ER3d) is approximately 1.0 cm⁻¹.