Experiments have been performed demonstrating the feasibility of direct implantation of laser-ablated metal ions into a substrate. Initial experiments implanted iron ions into silicon substrates at pulsed, bias voltages up to negative 10 kV. Implantation of Fe ions into Si was confirmed by cross-sectional transmission electron microscopy and x-ray photoelectron spectroscopy. The 7.6 nm depth of damage layers below the Si surface is slightly less than predicted by code calculations for a maximum, effective ion energy of about 8 keV. The ion depth of penetration is limited by the overlying Fe film as well as the slow rise and fall of the voltage.

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