Data are presented on high-power AlGaInN flip-chip light-emitting diodes (FCLEDs). The FCLED is “flipped-over” or inverted compared to conventional AlGaInN light-emitting diodes (LEDs), and light is extracted through the transparent sapphire substrate. This avoids light absorption from the semitransparent metal contact in conventional epitaxial-up designs. The power FCLED has a large emitting area and an optimized contacting scheme allowing high current (200–1000 mA, operation with low forward voltages at 200 mA), and therefore higher power conversion (“wall-plug”) efficiencies. The improved extraction efficiency of the FCLED provides 1.6 times more light compared to top-emitting power LEDs and ten times more light than conventional small-area LEDs. FCLEDs in the blue wavelength regime peak) exhibit external quantum efficiency and wall-plug efficiency at 200 mA and with record light output powers of 400 mW at 1.0 A.
High-power AlGaInN flip-chip light-emitting diodes
J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O’Shea, M. J. Ludowise, G. Christenson, Y.-C. Shen, C. Lowery, P. S. Martin, S. Subramanya, W. Götz, N. F. Gardner, R. S. Kern, S. A. Stockman; High-power AlGaInN flip-chip light-emitting diodes. Appl. Phys. Lett. 28 May 2001; 78 (22): 3379–3381. https://doi.org/10.1063/1.1374499
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