Photo-enhanced negative differential resistance (NDR) and photo-accelerated time-dependent dielectric breakdown (TDDB) were observed in thin nitride–oxide (N–O) dielectric film biased with gate negative under tungsten lamp illumination. The photo-induced leakage current and photo-accelerated TDDB show dramatic asymmetry under negative and positive gate bias with constant photo-illumination. Our experiments suggest a unique current conduction mechanism in this nitride thin film. A two-carrier conduction induced positive feedback transport process under negative gate bias, and a two-carrier conduction induced self-limiting transport process under positive gate bias are proposed to qualitatively explain the experimental data. The nitride thin film device possessing a light-enhanced NDR can be employed to develop Si-based optoelectronic devices such as switching and logic control.

Topics
Transport properties, Electrical properties and parameters, Optoelectronic devices, Dielectric properties, Negative resistance, Thin films, Oxides
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© 2001 American Institute of Physics.
2001
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