We study the growth of strained Ga1−xInxP layers on GaP (001) by gas-source molecular-beam epitaxy for x varying from 0.25 to 1. At a growth temperature of 520 °C, we find two main differences with respect to the well known GaInAs/GaAs system. First, for 0.25⩽x⩽0.5, we observe the development of wire-like structures oriented along the [110] direction and on the other hand, the growth of InP on GaP leads to the formation of huge dots in small density. The influence of the growth parameters such as the growth temperature or the phosphine flow rate is presented. The whole set of results is discussed in light of recent work on the phosphide surface reconstructions with a particular emphasis on the role of the cation-rich one.

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