Scanning capacitance microscope (SCM) is developed using an all-metallic probe, whose distance from the sample is controlled by detecting the shear-force drag on the laterally oscillating probe. The oscillatory motion of the probe is electromechanically excited and detected. Using this SCM, a set of images of topography, and is simultaneously obtained, where C and are, respectively, capacitance and applied voltage between the probe and the sample, and X is the coordinate along probe tip oscillation. The SCM developed shows sensitivity for higher than the conventional SCM. The image clearly indicates the built-in depletion region due to the junction.
REFERENCES
1.
2.
3.
P.
DeWolf
, T.
Clarysse
, W.
Vandervorst
, L.
Hellemans
, Ph.
Niedermann
, and W.
Hanni
, J. Vac. Sci. Technol. B
16
, 401
(1998
).4.
G.
Neubauer
, M.
Lawrence
, A.
Dass
, and T. J.
Johnson
, Mater. Res. Soc. Symp. Proc.
286
, 283
(1992
).5.
G.
Neubauer
, A.
Erickson
, C. C.
Williams
, J. J.
Kopanski
, M.
Rodgers
, and D.
Adderton
, J. Vac. Sci. Technol. B
14
, 426
(1996
).6.
7.
8.
C. C. Williams, Semiconductor Research Corporation, Contract Review, Austin, TX, 15–16 July 1997.
9.
V. V.
Zavyalov
, J. S.
MacMurray
, and C. C.
Williams
, Rev. Sci. Instrum.
70
, 158
(1999
).10.
W.
Timp
, M. L.
O’Malley
, R. N.
Kleiman
, and J. P.
Garno
, Tech. Dig. Int. Electron Devices Meet.
555
(1998
).11.
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© 2001 American Institute of Physics.
2001
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