Ohmic contacts were fabricated for AlGaN/GaN high-electron-mobility transistors by selective-area mass transport regrowth of GaN. The contact resistance ranged from 0.23 to 1.26 Ω mm for different contact areas and geometries. The average resistivity of the autodoped regrown GaN was measured to 4×10−3 Ω cm. Devices with regrown contacts were fabricated, achieving a transconductance of 210 mS/mm. The technique provides a low-cost regrowth process, with applications in particular for high Al-composition AlGaN/GaN devices.

1.
N.-Q.
Zhang
,
S.
Keller
,
G.
Parish
,
S.
Heikman
,
S. P.
DenBaars
, and
U. K.
Mishra
,
IEEE Electron Device Lett.
21
,
373
(
2000
).
Google Scholar
 
2.
Y.- F. Wu, D. Kapolnek, J. Ibbetson, N.-Q. Zhang, P. Parikh, B. P. Keller, and U. K. Mishra, International Electron Device Meeting, Piscataway, NJ (IEEE, Piscataway, NJ, 1999), p. 925.
3.
I. P.
Smorchkova
,
S.
Keller
,
S.
Heikman
,
C. R.
Elsass
,
B.
Heying
,
P.
Fini
,
J. S.
Speck
, and
U. K.
Mishra
,
Appl. Phys. Lett.
77
,
3998
(
2000
).
Google Scholar
 
4.
S.
Heikman
,
S. P.
DenBaars
, and
U. K.
Mishra
,
Jpn. J. Appl. Phys., Part 1
40
,
565
(
2001
).
Google Scholar
 
5.
S.
Nitta
,
T.
Kashima
,
Y.
Yukawa
,
S.
Yamaguchi
,
H.
Amano
, and
I.
Akasaki
,
MRS Internet J. Nitride Semicond. Res.
5S1
,
2
.
8
(
2000
).
Google Scholar
 
6.
S.
Nitta
,
M.
Kariya
,
T.
Kashima
,
S.
Yamaguchi
,
H.
Amano
, and
I.
Akasaki
,
Appl. Surf. Sci.
159
,
421
(
2000
).
Google Scholar
 
7.
J. A.
Freitas
, Jr.,
O.-H.
Nam
,
R. F.
Davis
,
G. V.
Saparin
, and
S. K.
Obyden
,
Appl. Phys. Lett.
72
,
2990
(
1998
).
Google Scholar
 
8.
Y.-F.
Wu
,
S.
Keller
,
P.
Kozodoy
,
B. P.
Keller
,
P.
Parikh
,
D.
Kapolnek
,
S. P.
DenBaars
, and
U. K.
Mishra
,
IEEE Electron Device Lett.
18
,
290
(
1997
).
Google Scholar
 
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2001
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