From the capacitance–voltage dependence of capacitors, we mathematically separated the capacitance into two parts corresponding to two regions of the samples, the uniform electric-field region and the nonuniform region. They are correlated with the bulk ferroelectric film region and the Schottky barrier interface region, respectively. The calculations based on the in-series capacitor model show a slight decrease of dielectric permitivity for the fatigued bulk films. By assuming a much smaller dielectric permitivity of the interface region than that of bulk films, it was found that the interface capacitance decreased remarkably compared with that of the bulk ferroelectric film after fatigue. This decrease was attributed to the lowering of ferroelectricity in the interface layer, which suggests that the fatigue is mainly an interface state controlled process. The asymmetricity in the interface capacitance–voltage curve is attributed to the different defect concentration levels in the top and bottom interface regions.
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23 April 2001
Research Article|
April 23 2001
Changes in the interface capacitance for fatigued lead–zirconate–titanate capacitors Available to Purchase
X. J. Meng;
X. J. Meng
National Laboratary for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
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J. L. Sun;
J. L. Sun
National Laboratary for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
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J. Yu;
J. Yu
National Laboratary for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
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L. X. Bo;
L. X. Bo
National Laboratary for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
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C. P. Jiang;
C. P. Jiang
National Laboratary for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
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Q. Sun;
Q. Sun
National Laboratary for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
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S. L. Guo;
S. L. Guo
National Laboratary for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
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J. H. Chu
J. H. Chu
National Laboratary for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
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X. J. Meng
National Laboratary for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
J. L. Sun
National Laboratary for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
J. Yu
National Laboratary for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
L. X. Bo
National Laboratary for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
C. P. Jiang
National Laboratary for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
Q. Sun
National Laboratary for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
S. L. Guo
National Laboratary for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
J. H. Chu
National Laboratary for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
Appl. Phys. Lett. 78, 2548–2550 (2001)
Article history
Received:
November 29 2000
Accepted:
March 05 2001
Citation
X. J. Meng, J. L. Sun, J. Yu, L. X. Bo, C. P. Jiang, Q. Sun, S. L. Guo, J. H. Chu; Changes in the interface capacitance for fatigued lead–zirconate–titanate capacitors. Appl. Phys. Lett. 23 April 2001; 78 (17): 2548–2550. https://doi.org/10.1063/1.1367301
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