Photonic band gaps can be generated in the impurity bands of photonic crystals formed by periodically placed defects. Even slight periodic modulation of the properties of these defects can open up very deep band gaps in the impurity bands. This phenomenon originates from the concentration of electromagnetic field at the defect regions, making electromagnetic wave extremely sensitive to the small changes of the defects. A dynamical photonic band gap in the impurity band created by a control light, provides a mechanism for constructing high-efficiency optical switches.

1.
E.
Yablonovitch
,
Phys. Rev. Lett.
58
,
2059
(
1987
).
Google Scholar
 
2.
O.
Painter
,
R. K.
Lee
,
A.
Scherer
,
A.
Yariv
,
J. D.
O’Brien
,
P. D.
Dapkus
, and
I.
Kim
,
Science
284
,
1819
(
1999
).
Google Scholar
 
3.
S.
Fan
,
P. R.
Villeneuve
,
J. D.
Joannopoulos
, and
E. F.
Schubert
,
Phys. Rev. Lett.
78
,
3294
(
1997
).
Google Scholar
 
4.
S. Y.
Lin
,
E.
Chow
,
V.
Hietala
,
P. R.
Villeneuve
, and
J. D.
Joannopoulos
,
Science
282
,
274
(
1998
).
Google Scholar
 
5.
E.
Lidorikis
,
M. M.
Sigalas
,
E. N.
Economou
, and
C. M.
Soukoulis
,
Phys. Rev. Lett.
81
,
1405
(
1998
).
Google Scholar
 
6.
A.
Yariv
,
Y.
Xu
,
R. K.
Lee
, and
A.
Scherer
,
Opt. Lett.
24
,
711
(
1999
).
Google Scholar
 
7.
M.
Bayer
,
T.
Gutbrod
,
A.
Forchel
,
T. L.
Reinecke
,
P. A.
Knipp
,
R.
Werner
, and
J. P.
Reithmaier
,
Phys. Rev. Lett.
83
,
5374
(
1999
).
Google Scholar
 
8.
M.
 
Bayindir
,
B.
 
Temelkuran
, and
E.
 
Ozbay
,
Phys. Rev. Lett.
 
84
,
2140
(
2000
);
Google Scholar
 
M.
Bayindir
,
B.
Temelkuran
, and
E.
Ozbay
,
Phys. Rev. B
61
,
R11855
(
2000
).
Google Scholar
 
9.
M.
Bayindir
and
E.
Ozbay
,
Phys. Rev. B
62
,
R2247
(
2000
).
Google Scholar
 
10.
E.
Yablonovitch
,
T. J.
Gmitter
,
R. D.
Meade
,
A. M.
Rappe
,
K. D.
Brommer
, and
J. D.
Joannopoulos
,
Phys. Rev. Lett.
67
,
3380
(
1991
).
Google Scholar
 
11.
V.
Kuzmiak
and
A. A.
Maradudin
,
Phys. Rev. B
57
,
15242
(
1998
).
Google Scholar
 
12.
P. R.
Villeneuve
,
S.
Fan
, and
J. D.
Joannopoulos
,
Phys. Rev. B
54
,
7837
(
1996
).
Google Scholar
 
13.
J. B.
Pendry
and
A.
MacKinnon
,
Phys. Rev. Lett.
69
,
2772
(
1992
).
Google Scholar
 
14.
The dielectric constants of the 0.50a GaAs layers in the structure are also slightly changed. However, it only leads to the shift of the impurity band and does not affect the band gap formation. This situation can be avoided by replacing the 0.50a GaAs layers with AlxGa1−xAs layers of different thickness.
15.
M.
Scalora
,
J. P.
Dowling
,
C. M.
Bowden
, and
M. J.
Bloemer
,
Phys. Rev. Lett.
73
,
1368
(
1994
).
Google Scholar
 
16.
P. R.
Villeneuve
,
D. S.
Abrams
,
S.
Fan
, and
J. D.
Joannopoulos
,
Opt. Lett.
21
,
2017
(
1996
).
Google Scholar
 
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© 2001 American Institute of Physics.
2001
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