We report improvements in the crystallinity of a III–V-based diluted magnetic semiconductor (Ga, Mn)As by heat treatment (annealing) after growth at comparatively low temperatures. This method can be used to raise the Curie temperature to 100 K without the need for severe optimization of growth conditions, as well as to adjust the material parameters to desired values.

Topics
Crystal structure, Phase transitions, Semiconductors
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© 2001 American Institute of Physics.
2001
American Institute of Physics
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