We compare several InGaN-based low-dimensional systems, by time-resolved photoluminescence (PL), versus temperature We investigate the influence of growing or not an AlGaN barrier on top of the active layer. We address the differences between quantum wells and quantum boxes 5–10 nm in diameter and 2 nm in height. Our results are consistent with carrier localization on potential fluctuations with spatial extension much smaller than the size of the quantum boxes. Growing an AlGaN barrier reduces the carrier mobility between fluctuations, thus maintaining an effective PL dominated by localized carriers up to room temperature.
Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes
P. Lefebvre, T. Taliercio, A. Morel, J. Allègre, M. Gallart, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, J. Massies; Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes. Appl. Phys. Lett. 12 March 2001; 78 (11): 1538–1540. https://doi.org/10.1063/1.1352664
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