Shallow donors in GaN epilayers grown by metalorganic chemical vapor deposition on sapphire and GaN substrates have been studied by selectively excited photoluminescence (SPL) and by far-infrared (FIR) spectroscopy. A comparison of FIR and SPL results reveals a small splitting between the and donor states, interpreted as partly being due to the nonspherical crystal symmetry. The utilization of the selective excitation of neutral donor bound excitons allows the identification of the rotational excited states. An interpretation of two-electron spectra in GaN involving excited states of is proposed.
Far-infrared and selective photoluminescence studies of shallow donors in GaN hetero- and homoepitaxial layers
G. Neu, M. Teisseire, E. Frayssinet, W. Knap, M. L. Sadowski, A. M. Witowski, K. Pakula, M. Leszczynski, P. Prystawko; Far-infrared and selective photoluminescence studies of shallow donors in GaN hetero- and homoepitaxial layers. Appl. Phys. Lett. 28 August 2000; 77 (9): 1348–1350. https://doi.org/10.1063/1.1290386
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