Shallow donors in GaN epilayers grown by metalorganic chemical vapor deposition on sapphire and GaN substrates have been studied by selectively excited photoluminescence (SPL) and by far-infrared (FIR) spectroscopy. A comparison of FIR and SPL results reveals a small splitting between the 2s and 2p donor states, interpreted as partly being due to the nonspherical crystal symmetry. The utilization of the selective excitation of neutral donor bound excitons I2 allows the identification of the I2 rotational excited states. An interpretation of two-electron spectra in GaN involving excited states of I2 is proposed.

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