We report on the luminescence properties of quantum wells (QWs) subjected to a variable amount of lattice mismatch induced strain, including wells with zero strain, compressive strain, and tensile strain. The primary peak emission energy of a 3 nm QW was redshifted by 236 meV as the stress in the well was changed from −0.86% (compressive) to 0.25% (tensile). It was also found that the photoluminescence intensity of quantum wells decreased with increasing strain. A lattice matched 9 nm QW exhibited a luminescence intensity that is three times greater than its highly strained counterpart. The potential applications of this strain engineering will be discussed.
Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures
M. E. Aumer, S. F. LeBoeuf, S. M. Bedair, M. Smith, J. Y. Lin, H. X. Jiang; Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures. Appl. Phys. Lett. 7 August 2000; 77 (6): 821–823. https://doi.org/10.1063/1.1306648
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