We have grown non--oriented (SBT) epitaxial thin films with well-defined (116) orientation by pulsed laser deposition on yttria-stabilized zirconia-buffered (YSZ-buffered) Si(100) substrates covered with electrically conductive (110)-oriented (SRO) bottom electrodes. The epitaxial growth of (110)-oriented SRO films on (100)-oriented YSZ on Si(100) was confirmed both by x-ray pole figures and transmission electron microscopy (TEM) analyses showing a diagonal-type rectangle-on-cube epitaxy of SRO on YSZ with respect to the substrate and yielding specific multiple twins which originate from the particular in-plane positioning of SRO on YSZ. Cross-sectional TEM analyses revealed a roof-like morphology at the SBT/SRO interface while the other interfaces are sharp. The ferroelectric measurements of the (116)-oriented SBT films show a remanent polarization of and a coercive field of 142 kV/cm for a maximum applied electric field of 283 kV/cm. A comparable hysteresis loop recorded from local piezoresponse by an atomic force microscope working in a piezoelectric mode has also been obtained.
Skip Nav Destination
Article navigation
13 November 2000
Research Article|
November 13 2000
Growth and characterization of non--oriented epitaxial ferroelectric films on buffered Si(100)
Ho Nyung Lee;
Ho Nyung Lee
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale, Germany
Search for other works by this author on:
Stephan Senz;
Stephan Senz
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale, Germany
Search for other works by this author on:
Nikolai D. Zakharov;
Nikolai D. Zakharov
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale, Germany
Search for other works by this author on:
Catalin Harnagea;
Catalin Harnagea
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale, Germany
Search for other works by this author on:
Alain Pignolet;
Alain Pignolet
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale, Germany
Search for other works by this author on:
Dietrich Hesse;
Dietrich Hesse
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale, Germany
Search for other works by this author on:
Ulrich Gösele
Ulrich Gösele
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale, Germany
Search for other works by this author on:
Appl. Phys. Lett. 77, 3260–3262 (2000)
Article history
Received:
July 28 2000
Accepted:
September 13 2000
Citation
Ho Nyung Lee, Stephan Senz, Nikolai D. Zakharov, Catalin Harnagea, Alain Pignolet, Dietrich Hesse, Ulrich Gösele; Growth and characterization of non--oriented epitaxial ferroelectric films on buffered Si(100). Appl. Phys. Lett. 13 November 2000; 77 (20): 3260–3262. https://doi.org/10.1063/1.1324982
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures
Tomoya Okuda, Shunsuke Ota, et al.
Era of entropy: Synthesis, structure, properties, and applications of high-entropy materials
Christina M. Rost, Alessandro R. Mazza, et al.
Related Content
Epitaxial growth of (103)-oriented ferroelectric SrBi 2 Ta 2 O 9 thin films on Si(100)
Appl. Phys. Lett. (May 2001)
Epitaxial growth of ferroelectric SrBi 2 Ta 2 O 9 thin films of mixed (100) and (116) orientation on SrLaGaO 4 (110)
Appl. Phys. Lett. (October 2001)
Effects of a Bi 4 Ti 3 O 12 buffer layer on SrBi 2 Ta 2 O 9 thin films prepared by the metalorganic decomposition
Appl. Phys. Lett. (June 1999)